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Intramolecular mixed-valence state through silicon or germanium double bridges in rigid Bis(Tetrathiafulvalenes)

机译:刚性双(四硫富瓦烯)中硅或锗双桥的分子内混合价态

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摘要

The synthesis and characterization of two ortho-dimethyltetrathiafulvalene (o-DMTTF)-based rigid dimers containing dimethylsilicon (Me(2)Si) or dimethylgermanium (Me(2)Ge) linkers are described. Single-crystal X-ray analysis reveals planar geometry for the central 1,4-disilicon or 1,4-digermanium six-membered rings. DFT calculations provide optimized conformations in agreement with the experimental ones, and also emphasize the role of the heteroatomic linkers in the conjugation between the two redox active units. Cyclic voltammetry measurements show sequential oxidation into radical cation, and then dication species. Solution EPR measurements on the radical-cation species indicate full delocalization of the unpaired electron over both electroactive TTF units, with an associated coupling of 0.42 G with twelve equivalent protons. DFT calculations afford fully planar geometry for the radical-cation species and confirm the experimental isotropic coupling constant. Single-crystal X-ray analyses of two charge-transfer compounds obtained upon chemical oxidation, formulated as [(Me(2)Si)(2)(o-DMTTF)(2)].1/2[TCNQ].1/2[TCNQF(4)] and [(Me(2)Ge)(2)(o-DMTTF)(2)].[TCNQ], demonstrate the occurrence of genuine mixed-valence radical-cation species, as well as a three-dimensional network of short S...S intermolecular contacts. Temperature-dependent conductivity measurements demonstrate semiconducting behavior for both charge-transfer compounds, with an increase of the absolute value of the conductivity upon applying external pressure. Band structure calculations reveal peculiar pseudo-two-dimensional electronic structures, also confirming electronic interactions through SiMe(2) and GeMe(2) bridges.
机译:描述了两个含二甲基硅(Me(2)Si)或二甲基锗(Me(2)Ge)接头的基于邻二甲基四硫富瓦烯(o-DMTTF)的刚性二聚体的合成和表征。单晶X射线分析揭示了中心1,4-二硅或1,4-二锗六元环的平面几何形状。 DFT计算提供了与实验一致的优化构象,并且还强调了杂原子接头在两个氧化还原活性单元之间共轭中的作用。循环伏安法测量显示依次被氧化成自由基阳离子,然后是指示剂。自由基阳离子物质的溶液EPR测量表明,未配对的电子在两个电活性TTF单元上都完全失域,并伴有0.42 G与十二个等效质子的耦合。 DFT计算为自由基阳离子提供了完全平面的几何形状,并确定了实验各向同性的耦合常数。对两种电荷转移化合物进行化学氧化后的单晶X射线分析,其表示为[(Me(2)Si)(2)(o-DMTTF)(2)]。1/2 [TCNQ] .1 / 2 [TCNQF(4)]和[(Me(2)Ge)(2)(o-DMTTF)(2)]。[TCNQ]证明了真正的混合价自由基阳离子物种的存在,以及S ... S分子间短接触的三维网络。随温度变化的电导率测量结果表明,两种电荷转移化合物的半导体性能都随着施加外部压力而增加了电导率的绝对值。能带结构计算揭示了特殊的伪二维电子结构,也证实了通过SiMe(2)和GeMe(2)桥的电子相互作用。

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